SUP60030E www.vishay.com vishay siliconix s15-1869-rev. a, 10-aug-15 1 document number: 68293 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 80 v (d-s) mosfet ordering information: SUP60030E-ge3 (lead (pb)-free and halogen-free) features ? trenchfet ? power mosfet ? maximum 175 c junction temperature ? very low q gd reduces power loss from passing through v plateau ? 100 % r g and uis tested ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? power supply - secondary synchronous rectification ?dc/dc converter ? power tools ? motor drive switch ? dc/ac inverter ? battery management notes a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr4 material). d. package limited. product summary v ds (v) r ds(on) ( ) max. i d (a) d q g (typ.) 80 0.0034 at v gs = 10 v 120 94 0.0036 at v gs = 7.5 v 120 to-220ab top view s s g n-channel mosfet g d s absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 80 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 120 d a t c = 70 c 120 d pulsed drain current (t = 100 s) i dm 250 avalanche current i as 70 single avalanche energy a l = 0.1 mh e as 245 mj maximum power dissipation a t c = 25 c p d 375 b w t c = 125 c 125 b operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.4
SUP60030E www.vishay.com vishay siliconix s15-1869-rev. a, 10-aug-15 2 document number: 68293 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not su bject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 80 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 - 4 gate-body leakage i gss v ds = 0 v, v gs = 20 v - - 250 na zero gate voltage drain current i dss v ds = 80 v, v gs = 0 v - - 1 a v ds = 80 v, v gs = 0 v, t j = 125 c - - 150 v ds = 80 v, v gs = 0 v, t j = 175 c - - 5 ma on-state drain current a i d(on) v ds 10 v, v gs = 10 v 120 - - a drain-source on-s tate resistance a r ds(on) v gs = 10 v, i d = 30 a - 0.0028 0.0034 v gs = 7.5 v, i d = 20 a - 0.0030 0.0036 forward transconductance a g fs v ds = 15 v, i d = 30 a - 82 - s dynamic b input capacitance c iss v gs = 0 v, v ds = 40 v, f = 1 mhz - 7910 - pf output capacitance c oss - 3250 - reverse transfer capacitance c rss - 348 - total gate charge c q g v ds = 40 v, v gs = 10 v, i d = 20 a -94141 nc gate-source charge c q gs -31- gate-drain charge c q gd -10- gate resistance r g f = 1 mhz 0.28 1.4 2.8 turn-on delay time c t d(on) v dd = 40 v, r l = 4 i d ? 10 a, v gen = 10 v, r g = 1 -2440 ns rise time c t r -2440 turn-off delay time c t d(off) -3460 fall time c t f -1428 drain-source body diode ra tings and characteristics b (t c = 25 c) pulsed current (t = 100 s) i sm --250a forward voltage a v sd i f = 10 a, v gs = 0 v - 0.8 1.5 v reverse recovery time t rr i f = 34 a, di/dt = 100 a/s - 126 190 ns peak reverse recovery charge i rm(rec) -510a reverse recovery charge q rr - 0.315 0.475 c
SUP60030E www.vishay.com vishay siliconix s15-1869-rev. a, 10-aug-15 3 document number: 68293 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance capacitance transfer characteristics on-resistance vs. drain current gate charge 0 50 100 150 200 250 01234 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 6 v v gs = 5 v v gs = 4 v 0 30 60 90 120 0 6 12 18 24 30 g f s -tran s conductance ( s ) i d - drain current (a) t c = 25 c t c = 125 c t c = - 55 c 0 2200 4400 6600 8800 11000 0 20406080 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss c o ss c r ss 0 20 40 60 80 100 02468 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0.0010 0.0015 0.0020 0.0025 0.0030 0.0035 0.0040 0 20406080100 r d s (on) -on-re s i s tance () i d - drain current (a) v gs =7.5 v v gs = 10 v 0 2 4 6 8 10 0 20406080100 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 64 v v d s = 20 v v d s = 40 v i d = 20 a
SUP60030E www.vishay.com vishay siliconix s15-1869-rev. a, 10-aug-15 4 document number: 68293 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature source drain diode forward voltage threshold voltage current de-rating 0.70 0.95 1.20 1.45 1.70 1.95 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) v gs = 10 v, i d =30 a v gs = 7.5 v i d =30 a 0 0.002 0.004 0.006 0.008 0.010 3 4.5 6 7.5 9 r d s (on) -on-re s i s tance ( ) v gs - g ate -to - s ource voltage (v) t j = 125 c t j = 25 c i d = 30 a 85 88 91 94 97 100 - 50 - 25 0 25 50 75 100 125 150 175 v d s (v) drain -to- s ource voltage t j - temperature ( c) i d = 250 a 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 1.1 1.5 1.9 2.3 2.7 3.1 3.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) (v) t j - temperature ( c) i d = 250 a 0 50 100 150 200 250 300 0 255075100125150175 i d - drain current (a) t c -ca s e temperature ( c)
SUP60030E www.vishay.com vishay siliconix s15-1869-rev. a, 10-aug-15 5 document number: 68293 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) single pulse avalanche current capability vs. time safe operating area normalized thermal transient impedance, junction-to-ambient 10 100 0.000001 0.00001 0.0001 0.001 0.01 i dav (a) time ( s ) 150 c 25 c 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 100 s i dm limited t c = 25 c s ingle pul s e bvd ss limited 1 m s 100 m s dc 10 m s i d limited 10 s 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
SUP60030E www.vishay.com vishay siliconix s15-1869-rev. a, 10-aug-15 6 document number: 68293 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction to ambient (25 c) - normalized transient thermal impedance junction to case (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68293 . square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 0.2 0.1 duty cycle = 0.5 0.05 0.02 single pulse 10
package information www.vishay.com vishay siliconix revison: 16-jun-14 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c d2 millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 d2 12.19 12.70 0.480 0.500 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: t14-0413-rev. p, 16-jun-14 dwg: 5471
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